>25 W pulses from 1.5 μm double-asymmetric waveguide, 100 μm stripe laser diode with bulk active layer

Abstract

The experimental characterization of a high-power pulsed semiconductor laser operating in the eye-safe spectral range (wavelength around 1.5 (Formula presented.) m), with an asymmetric waveguide structure, a 100 (Formula presented.) m wide stripe, and a bulk active layer positioned very close to the p-cladding, is reported. An anti-reflection/high reflection coated laser with a stripe width of 100 (Formula presented.) m exhibits a single-facet output power over 25 W at a pumping current amplitude of 100 A.