Simulation and fabrication of heterojunction silicon solar cells from numerical computer and hot-wire CVD

Abstract

In this paper, we will present a Pc1D numerical simulation for heterojunction (HJ) silicon solar cells, and discuss their possibilities and limitations. By means of modeling and numerical computer simulation, the influence ofemitter-layerlintrinsic-layerlcrystalline-Si heterostructures with different thickness and crystalUnity on the solar cell performance is investigated and compared with hot wire chemical vapor deposition (HWCVD) experimental results. A new technique for characterization ofn-type microcrystalline silicon (n(μc-Si)lintrinsic amorphous silicon (i-a-Si)lcrystalline silicon (c-Si) heterojunction solar cells from PcID is developed. Results of numerical modeling as well as experimental data obtained using HWCVD on μc-Si (n)l α-Si (I)Ic-Si (p) heterojunction are presented. This work improves the understanding of HJ solar cells to derive arguments for design optimization. Some simulated parameters of solar cells were obtained: the best results for Jsc = 39-4mA/cm2, V oc = 064V, FF = 83%, and η = 21% have been achieved. After optimizing the deposition parameters of the n-layer and the H2 pretreatment of solar cell, the single-side HJ solar cells with Jsc = 34-6mA/cm2, Voc = 0-615V, FF = 71%, and an efficiency of 15-2% have been achieved. The double-side HJ solar cell with Jsc = 34-8mA/cm2, Voc = 0645 V, FF = 73%, and an efficiency of 164% has been fabricated. Copyright © 2009 John Wiley & Sons, Ltd. silicon; heterojunction; solar cell; Pc1D simulation.