The Vacancy Pool Model for Amorphous In-Ga-Zn-O Thin-Film Transistors

Abstract

In this paper, the reaction rate of oxygen vacancy ( V O ) by the derivatives of threshold voltage ( V th ) in the amorphous indium-gallium-zinc oxide thin-film transistors under light pulses with altering duty ratios is investigated. More importantly, after collecting and analyzing a lot of experimental results, a comprehensive model named V O pool is proposed. The proposed model can more universally describe the characteristic of V O reacting to the light and its degradation behavior under various kinds of stress condition.