Electron mobility study of hot-wall CVD GaN and InN nanowires

Abstract

A review of the dependence of the electron mobility on the free carrier concentration for gallium nitride and indium nitride nanowires grown using hot-wall chemical vapour deposition is presented. Gallium nitride nanowires exhibit mobilities of 100 cm2/Vs to below 1 cm2/Vs for carrier concentrations of 1019 to 1020 cm-3. Theoretical estimations and annealing experiments indicate that the nanowires are heavily compensated. Indium nitride nanowires also exhibit high carrier concentrations, of the order of 1020 to 1022 cm . For both types of nanowires, mobility decreases with increasing carrier concentration, consistent with transport limited by impurity scattering.