Carrier-mediated ferromagnetism in vanadium-doped (Sb 1-xBi x) 2Te 3 solid solutions

Abstract

Ferromagnetism in tetradymite-type diluted magnetic semiconductors (Sb1-x Bix) 1.98 V0.02 Te3 (0≤x≤1) is revealed to be of hole-mediated nature. The increasing replacement of antimony with bismuth results in a monotonous decrease of the hole concentration and the Curie temperature while the electrical resistivity increases. The value of the Curie temperature shows a linear dependence of N p13, where N is the vanadium concentration and p is the concentration of hole. This trend agrees with the mean-field theory predictions. © 2006 American Institute of Physics.