Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy

Abstract

We investigate the formation of GaAs quantum dash pairs with different coverages by droplet epitaxy. The GaAs quantum dash pairs of various sizes are fabricated by high temperature droplet epitaxy. Dual-sized quantum dash pairs are observed along $[01\bar 1]$ orientation. Depending on the Ga cov- erage, the width of the quantum dash pairs can be tuned from ∼100 nm to ∼300 nm while keeping the height in the range of 4 nm to 10 nm. The coverage dependence of quantum dash pairs is also confirmed with photoluminescence measurement. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.