Identification of a determining parameter for resistive switching of TiO2 thin films

Abstract

Electric-pulse-induced resistive switching of 43 nm thick Ti O2 thin films grown by metalorganic chemical vapor deposition was studied by current-voltage (I-V) and constant voltage-time measurements. The resistance ratio between the two stable states of the film constitutes approximately 1000. The allowed current level and voltage step width during the sweep mode I-V measurements influenced switching parameters, such as the switching voltage, time before switching, and resistance values. However, it was clearly observed that the power imparted to the film controlled mainly switching. The required power for successful switching was almost invariant irrespective of other measurement variables. © 2005 American Institute of Physics.