Preparation of epoxy/organoclay nanocomposites for electrical insulating material using an ultrasonicator

Abstract

In this paper, we discuss design considerations for an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a lateral asymmetric channel (LAC) doping profile. We employed a 0.35 μm standard complementary MOSFET process for fabrication of the devices. The gates to the LAC doping overlap lengths were 0.5, 1.0, and 1.5 μm. The drain current (ION), transconductance (gm), substrate current (ISUB), drain to source leakage current (IOFF), and channel-hot-electron (CHE) reliability characteristics were taken into account for optimum device design. The LAC devices with shorter overlap lengths demonstrated improved ION and gm characteristics. On the other hand, the LAC devices with longer overlap lengths demonstrated improved CHE degradation and IOFF characteristics. © 2011 KIEEME. All rights reserved.