Multisim Design and Simulation of 2.2GHz LNA for Wireless Communication

Abstract

ABSRACT This paper presents the work done on the design and simulation of a high frequency low noise amplifier for wireless communication. The purpose of the amplifier is to amplify the received RF path of a wireless network. With high gain, high sensitivity and low noise using Bipolar Junction transistor (BJT). The design methodology requires analysis of the transistor for stability, proper matching, network selection and fabrication. The BJT transistor was chosen for the design of the LNA due to its low noise and good gain at high frequency. These properties were confirmed using some measurement techniques including Network Analyzer, frequency analyzer Probe and Oscilloscope for the simulation and practical testing of the amplifier to verify the performance of the designed High frequency Low noise amplifier. The design goals of noise figure of 0.52dB-0.7dB and bias conditions are V cc = 3.5 V and I cc = 55 mA to produce 16.8 dB gain across the 0.4–2.2GHz band.