A novel 2-Bit/Cell p-channel logic programmable cell with pure 90-nm CMOS technology

Abstract

A new p-channel nitride-based one-time programmable (OTP) memory was developed for advanced-logic nonvolatile-memory (NVM) applications. A 0.296-μm2/bit (∼35 F2) OTP cell, i.e., 0.592 μm2/cell, with a self-aligned nitride storage node was fabricated using standard 90-nm CMOS processes and is fully independent of gate oxide for high scalability. Additionally, the ultrahigh-density OTP cell exhibits excellent retention, immunity against disturbance, and a wide on/off window under the band-to-band hot electron programming. In summary, the new p-channel OTP cell is a very promising solution for use in high-density logic NVM applications beyond the 90-nm technology node. © 2008 IEEE.