Enhanced Light Output Power in InGaN Light-Emitting Diodes by Fabricating Inclined Undercut Structure

Abstract

The InGaN-based light-emitting diode (LED) with an inclined undercut structure is fabricated through the photoelectrochemical two-step process to increase light extraction efficiency. In the first step the sidewall-undercut structure at the p-type and n-type GaN interface is created by selective wet oxidation on an n-type GaN surface in pure H/sub 2/O solution. In the second step an inclined undercut structure through a crystallographic wet-etching process is formed by immersion in hot KOH solution. This crystallographic wet-etching process can remove the Ga/sub 2/O/sub 3/ layer and form a {101 macr 1 macr } p-type GaN stable plane, {101 macr 0} n-type GaN stable plane on the mesa sidewall. This inclined p-type GaN plane of LED structure can provide the higher overlap of incident light beam core and extraction core overlap on the mesa sidewall, and the total light output power of the treated LED is 2.10 times higher than the standard LED. Consequently, this inclined undercut LED structure is suitable for high-efficiency nitride-based LED application