Optimization of atomic layer deposition temperature of ZrO2 protective coat for GaInAsP photonic crystal nanolaser sensor

Abstract

This study examined the effect of atomic layer deposition temperature of a ZrO2 protective coat on GaInAsP semiconductor photonic crystal nanolaser sensors. At low temperatures (around 100 °C), the nonradiative centers at the ZrO2/GaInAsP interfaces were reduced, and the laser operation and refractive index sensing characteristics were stabilized. At high temperatures (around 250 °C), the nonradiative centers increase, which, in turn, improves the ion sensitivity based on surface recombination.