In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity

Abstract

Amorphous Ga2O3 films have been deposited in situ on (100) GaAs layers grown by molecular beam epitaxy in ultrahigh vacuum. The Ga2O3-GaAs interface is stable during photoexcitation and the photoluminescence (PL) intensity, measured at 514.5 nm excitation wavelength, is enhanced drastically by a factor of 420 as compared to a corresponding bare GaAs surface. The Ga2O3-GaAs interface recombination velocity derived from a modified dead layer model is below 104 cm/s. Furthermore, the PL intensity of Ga2O3-GaAs structures approaches that of a very low interface state density (2×109 eV-1 cm-2) AlGaAs-GaAs reference structure. © 1995 American Institute of Physics.