Prospects of SiGe heterodevices

Abstract

State-of-the-art microelectronics is based on silicon integrated circuits with constantly shrinking minimal lateral dimensions. SiGe heterodevices offer compatibility with this silicon technology and also utilization of heterostructure effects. In this review mainly the existing device concepts, the advantages and limits of the SiGe/Si system and the realization of device structures by molecular beam epitaxy are described. © 1995, All rights reserved.