Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing

300Citations
Citations of this article
166Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Light collection efficiency is an important factor that affects the performance of many optical and optoelectronic devices. In these devices, the high reflectivity of interfaces can hinder efficient light collection. To minimize unwanted reflection, anti-reflection surfaces can be fabricated by micro/nanopatterning. In this paper, we investigate the fabrication of broadband anti-reflection Si surfaces by laser micro/nanoprocessing. Laser direct writing is applied to create microstructures on Si surfaces that reduce light reflection by light trapping. In addition, laser interference lithography and metal assisted chemical etching are adopted to fabricate the Si nanowire arrays. The anti-reflection performance is greatly improved by the high aspect ratio subwavelength structures, which create gradients of refractive index from the ambient air to the substrate. Furthermore, by decoration of the Si nanowires with metallic nanoparticles, surface plasmon resonance can be used to further control the broadband reflections, reducing the reflection to below 1.0% across from 300 to 1200 nm. An average reflection of 0.8% is achieved. © 2014 CIOMP.

Cite

CITATION STYLE

APA

Yang, J., Luo, F., Kao, T. S., Li, X., Ho, G. W., Teng, J., … Hong, M. (2014). Design and fabrication of broadband ultralow reflectivity black Si surfaces by laser micro/nanoprocessing. Light: Science and Applications, 3. https://doi.org/10.1038/lsa.2014.66

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free