Abstract
We report on the fabrication and electrical characterisation of memristors with TiO2/TiO2+x active layer. This active layer is deposited at room temperature with RF-sputtering and consists of two sub-layers, the top one of which contains excess oxygen atoms. Electrical characterisation of the devices demonstrates similar switching characteristics as previously reported for nano-scale memristors with TiO2/TiO2-x active cores. ©2010 Crown.
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Prodromakis, T., Michelakis, K., & Toumazou, C. (2010). Fabrication and electrical characteristics of memristors with TiO 2/TiO2+x active layers. In ISCAS 2010 - 2010 IEEE International Symposium on Circuits and Systems: Nano-Bio Circuit Fabrics and Systems (pp. 1520–1522). https://doi.org/10.1109/ISCAS.2010.5537379
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