Photodetector based on Rutile and Anatase TiO2 nanostructures/n-Si Heterojunction

Abstract

Rutile and anatase titanium dioxide TiO2 nanostructures has been prepared successfully by hydrothermal technique. Also Rutile and anatase TiO2 /n-Si heterojunction detector (HJ) has been fabricated. Hall Effect measurements confirmed that prepared films are n-type. The optical absorption spectra showed the prepared films have peak absorption in UV region. TiO2/n-Si heterojunction had exhibited diode-like rectifying I-V behaviour in the dark as well as under the illumination. Ideality factor greater than 2 and rectification factor for Rutile TiO2/n-Si HJ is equal 32.0961 higher than anatase TiO2/n-Si HJ. Photodetetor based on rutile TiO2/n-Si HJ showed higher responsivity and incident photon-to-current efficiency (IPCE) than photodetector based on anatase TiO2/n-Si HJ. Photodetetor based on rutile TiO2/n-Si HJ has responsivity is 69.11Amp/W at 570 nm and IPCE is 21.2%at 370nm and 1.38% at 570nm. For the purpose of investigating the impacts of TiO2 crystal phase upon the performance of the device despite the fact that rutile has a lower band gap compared to anatase, rutile exhibits better photovoltaic activity due to its higher specific surface area.