Abstract
CuInGaSe 2 (CIGS) thin-film has successfully grown at low temperature 400 °C for bifacial solar cells and TFTs without degrading the silicon solar cell on the other side. The efficiency of CIGS solar cells reached 6.3% and 11% at 400 and 500 °C, respectively, by sodium-free and Cd-free (n-type ZnS buffer layer used) green technologies. Texturing technique has been introduced here on Si not only to relieve the sodium-free impact on CIGS-crystallization but also to enhance the adhesion between CIGS solar cells and underneath substrate. CIGS TFTs are reported first time and revealed a record-high hole-mobility of 0.22 cm 2/V-s. Hybrid CIGS solar cells/TFTs are uniformly formed on 6″ wafers, simultaneously powered with silicon solar cells. © 2011 IEEE.
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CITATION STYLE
Hsiao, Y. J., Hsueh, T. J., Shieh, J. M., Yeh, Y. M., Wang, C. C., Dai, B. T., … Yang, F. L. (2011). Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2011.6131686
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