Abstract
In this letter, the characteristics of metal gate (MG) fuses in 28-nm complementary metal-oxide-semiconductor (CMOS) technology are investigated. Through analyzing its initial and after program characteristics, the fuse burning process is studied. The stacked layer MG fuses exhibit two stages in the burning process. These unique programming characteristics of the MG electronic fuse provide insights for the future development low power and high reliable electrically programmable fuses by advanced nanoscale CMOS technologies. © 1980-2012 IEEE.
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Hsieh, M. C., Lin, Y. C., Chin, Y. W., Chang, T. S., King, Y. C., & Lin, C. J. (2013). Characterization of multilayer metal gate fuse in 28-nm CMOS logic technology. IEEE Electron Device Letters, 34(9), 1088–1090. https://doi.org/10.1109/LED.2013.2272475
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