Fabrication and characteristics of pentacene/vanadium pentoxide field-effect transistors

Abstract

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V 2O 5) as a Lewis-acid layer. Typical source-drain current (I DS) vs. source-drain voltage (V DS) curves were observed under negative gate voltages (V GS) application, and the shift of the threshold voltage for FET driving (V t) to positive side was also observed by V 2O 5 layer insertion, that is, -2.5 V for device with V 2O 5 layer and -5.7 V for device without V 2O 5 layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V 2O 5 layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V t improvement. © 2011 American Institute of Physics.