Conduction mechanisms of the reverse leakage current of β-Ga2O3 Schottky barrier diodes

Abstract

In order to determine the temperature dependence of the reverse transition voltage between thermionic emission and tunneling mechanisms, a numerical method has been applied for β-Ga2O3 Schottky barrier diodes. The main idea of this method is based on the intersection of I–V curves of thermionic emission and tunneling process. The reverse transition voltage increases for low and high temperatures, while it decreases at intermediate temperatures. This means that unexpected peak by Padovani–Stratton’s condition is observed at low temperatures. The reverse transition voltage increases linearly with increasing the barrier height, and the inverse of doping concentration. An analytical model has been proposed to predict the dependence of the reverse transition voltage on temperature, doping concentration and barrier height for β-Ga2O3 Schottky barrier diodes. This model is well tested on experimental reverse transition voltage data previously published in the literature for β-Ga2O3 SBDs.