A new chem. vapor deposition method of thin film in mol. flow region (MF-CVD) is proposed, and is applied to the prepn. of BN films using NH3 and decarborane reaction gases. The compn. of the films can be closely controlled by regulating the pressure of source gases and stoichiometric boron nitride films deposited at NH3/B10H14 ≥20 at the substrate temp. of 850°. From the chem. shift of boron Kα2 peak in the x-ray fluorescence spectra, the BNs films having the compn. x <0.75 are mixt. of boron and boron nitride. X-ray diffusion study indicates that the films re amorphous. The optical properties of the boron nitride films are also clarified. The energy of the direct allowed transition is estd. to be 5.90 eV. [on SciFinder(R)]
CITATION STYLE
Nakamura, K. (1985). Preparation and Properties of Amorphous Boron Nitride Films by Molecular Flow Chemical Vapor Deposition. Journal of The Electrochemical Society, 132(7), 1757–1762. https://doi.org/10.1149/1.2114206
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