Advances in 200 mm 4H SiC Wafer Development and Production

Abstract

200 mm diameter n-type 4H SiC wafers were produced from bulk crystals grown using a physical vapor transport (PVT) method. The configuration of the growth cell was modified to both allow for the growth of larger crystals with respect to the standard 150 mm process, and to induce a thermal environment necessary to increase the mass deposition rate. A 25% increase in deposition rate was achieved relative to the standard process. The resulting wafers exhibited resistivity uniformity comparable to commercial 150 mm product. Optical and x-ray techniques were used to evaluate wafer quality, and revealed surface and bulk crystal defect densities acceptable for epilayer growth.