Effect of electronic state for in-materio physical reservoir computing performance with a porphyrin-polyoxometalate/single-walled carbon nanotube network

Abstract

Semiconducting single-walled carbon nanotube (SWNT)/porphyrin-polyoxometalate (por-POM) networks were fabricated using [H4tBuTPP]2[SV2W10O40] (tBu H4TPP-POM) and [H4TPP]2[SV2W10O40] (H4TPP-POM) to compare their reservoir computing (RC) performances. Nonlinear electrical properties, phase shifts, and higher harmonics, which are required for superior RC performances, were generated in SWNT/por-POM networks. Lissajous plots show various phase shifts as the input frequency decreases, reflecting the relaxation time of the dynamics in the por-POMs. The SWNT/H4TPP-POM network exhibits the best performance of the RC benchmark task, indicating that H4TPP-POM generates rich chemical dynamics based on different charge accumulation with different electronic state in por-POM.