Flexible fullerene field-Effect transistors fabricated through solution processing

Abstract

C60-based thin-film transistors are fabricated through solution processing. On rigid indium tin oxide (ITO) glass, the transistors display electron mobilities as high as 0.21 cm2 V-1 s-1 and a threshold voltage of 0.7V, only slightly lower than those of organic thin-film transistors prepared through vacuum deposition. On ITO-coated PET substrates, the mobilities in the flexible devices (see image) are approximately one order of magnitude lower than those of devices prepared on rigid glass substrates. (Figure Presented) © 2009 WILEY-VCH Verlag GmbH & Co. KGaA.