Controlled nitrogen incorporation in GaNSb alloys

Abstract

The incorporation of N in molecular-beam epitaxy of GaNxSb 1-x alloys with x ≤ 0.022 has been investigated as a function of temperature (325-400°C) and growth rate 0.25-1.6 μmh-1. At fixed growth rate, the incorporated N fraction increases as the temperature is reduced until a maximum N content for the particular growth rate reached. At each temperature, there is a range of growth rates over which the N content is inversely proportional to the growth rate; the results are understood in terms of a kinetic model. The systematic growth rate- and temperature-dependence enables the N content and resulting band gap to be controlled. Copyright © 2011 Author(s).