The influence of interface on spin pumping effect in Ni80Fe20 /Tb bilayer

Abstract

Focusing on the interface effect of the Ni80Fe20 (Py)/terbium (Tb) bilayer, the influence of interface on the magnetization dynamic damping is investigated systematically. Two series of Py (12 nm)/Tb (d nm) films with and without copper (Cu) (1 nm) interlayer are deposited on silicon (Si) substrates by DC magnetron sputtering at room temperature. From vibrating sample magnetometer (VSM) measurements, the saturation magnetization (Ms) decreases with increasing Tb thickness in Py/Tb bilayer while the decrease of Ms is suppressed efficiently by inserting a Cu layer with even 1 nm of thickness. From the frequency dependence of ferromagnetic resonance (FMR) linewidth, we can obtain the Gilbert damping coefficient (α), α is found to exhibit an extreme enhancement in comparison to the single Py layer and shows an increasing trend with increasing Tb thickness. By inserting the Cu layer, α decreases significantly. From theoretical fitting, the spin diffusion length (λSD) and spin mixing conductance (g↑↓) are determined. It shows that the interface structure influences the spin mixing conductance but not the spin diffusion length.