Abstract
Undoped indium oxide films with room temperature d0 ferromagnetism were prepared by radiofrequency magnetron sputtering with different O2/Ar flux ratio. The optical and magnetic properties changed non-monotonously as the oxygen flux increases. A conversion of conductivity from n-type to p-type was observed as the flux ratio reached 15:15. The concordant results in structural, electrical, optical, and magnetic properties suggest that single ionized oxygen and indium vacancies play crucial roles in mediating the ferromagnetism in n and p-type In2O 3 films, respectively. © 2012 American Institute of Physics.
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CITATION STYLE
Sun, S., Wu, P., & Xing, P. (2012). D0 ferromagnetism in undoped n and p-type In2O 3 films. Applied Physics Letters, 101(13). https://doi.org/10.1063/1.4755771
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