About the mechanisms of spin-dependent recombination in semiconductors

Abstract

Two mechanisms of spin-dependent recombination in semiconductors were compared in this paper (the first one is well known as the Kaplan-Solomon-Mott mechanism, the second one is often referred to as the spin-dependent Shockley-Read recombination through the excited triplet states of localized electron pairs). The applicability of quantum equations for von Neumann operator to the theoretical description of both mechanisms was proved. The conditions allowing to give preference to one of the mechanisms was formulated. The peaks of an electrically detected magnetic resonance were computed for both mechanisms.