Resonant Tunnelling Diode Design for Oscillator Circuit

Abstract

Resonant Tunneling Diode (RTD) was introduced by Tsu and Esaki in 1973 and it is a p-n junction device that exhibits Negative Differential Resistance (NDR). Due to the NDR and its characteristics, RTD is suitable for high speed application device especially in the oscillator circuit. The fast-acting negative differential resistance of RTDs make them excellent devices for very high-frequency electronic applications. An NDR region is an important region at which an oscillation will occur. Therefore, this study perform a simulation of RTD design for oscillator circuit at a target frequency of 500 - 600 GHz. In this research, the simulation of I-V characteristics for RTD device and oscillator characteristics are performed in MATLAB. The C-V characteristics are identified and simulated in order to define the frequency value. It can be observed that a smaller capacitance value is required in order to obtain higher frequency oscillation. The target frequency oscillation at around 500-600 GHz have been achieved through the simulations of the RTD design.