Effects of thermal annealing on the properties of zirconium-doped mgx zn1−x o films obtained through radio-frequency magnetron sputtering

Abstract

Zirconium-doped Mgx Zn1−x O (Zr-doped MZO) mixed-oxide films were investigated, and the temperature sensitivity of their electric and optical properties was characterized. Zr-doped MZO films were deposited through radio-frequency magnetron sputtering using a 4-inch ZnO/MgO/ZrO2 (75/20/5 wt%) target. Hall measurement, X-ray diffraction (XRD), transmittance, and X-ray photoelectron spectroscopy (XPS) data were obtained. The lowest sheet resistance, highest mobility, and highest concentration were 1.30 × 103 Ω/sq, 4.46 cm2 /Vs, and 7.28 × 1019 cm−3, respectively. The XRD spectra of the as-grown and annealed Zr-doped MZO films contained Mgx Zn1−x O(002) and ZrO2 (200) coupled with Mg(OH)2 (101) at 34.49◦, 34.88◦, and 38.017◦, respectively. The intensity of the XRD peak near 34.88◦ decreased with temperature because the films that segregated Zr4+ from ZrO2 (200) increased. The absorption edges of the films were at approximately 348 nm under 80% transmittance because of the Mg content. XPS revealed that the amount of Zr4+ increased with the annealing temperature. Zr is a potentially promising double donor, providing up to two extra free electrons per ion when used in place of Zn2+.