Plasma deposition of amorphous silicon films: An overview on some open questions

Abstract

Results on amorphous silicon deposition by SiH 4, SiF 4 and SiCl4 glow discharges are discussed so as to better understand the plasma phase processes leading to the growth precursors, the plasma/surface interaction and the microscopic parameters affecting the material properties. In particular, the chemical activity of both silicon radicals, hydrogen and halogen atoms, as well as charged particles in the gas phase and on the surface is examined. © 1988 IUPAC