Synthesis of ReN 3 Thin Films by Magnetron Sputtering

Abstract

In this work ReN x films were prepared by reactive magnetron sputtering at room temperature and deposited on a silicon wafer. It was found that the diffractograms of the nitrogen-rich rhenium film are consistent with those produced by high-pressure high-temperature methods, under the assumption that the film is oriented on the substrate. Using density functional calculations it was found that the composition of this compound could be ReN 3 , instead of ReN 2 , as stated on previous works. The ReN 3 compound fits in the Ama2 (40) orthorhombic space group, and due to the existence of N 3 anions between Re layers it should be categorized as an azide. The material is exceptionally brittle and inherently unstable under indentation testing.