Near-Unity Internal Quantum Efficiency of Luminescent Silicon Nanocrystals with Ligand Passivation

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Abstract

Spectrally resolved photoluminescence (PL) decays were measured for samples of colloidal, ligand-passivated silicon nanocrystals. These samples have PL emission energies with peak positions in the range ∼1.4-1.8 eV and quantum yields of ∼30-70%. Their ensemble PL decays are characterized by a stretched-exponential decay with a dispersion factor of ∼0.8, which changes to an almost monoexponential character at fixed detection energies. The dispersion factors and decay rates for various detection energies were extracted from spectrally resolved curves using a mathematical approach that excluded the effect of homogeneous line width broadening. Since nonradiative recombination would introduce a random lifetime variation, leading to a stretched-exponential decay for an ensemble, we conclude that the observed monoexponential decay in size-selected ensembles signifies negligible nonradiative transitions of a similar strength to the radiative one. This conjecture is further supported as extracted decay rates agree with radiative rates reported in the literature, suggesting 100% internal quantum efficiency over a broad range of emission wavelengths. The apparent differences in the quantum yields can then be explained by a varying fraction of "dark" or blinking nanocrystals.

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Sangghaleh, F., Sychugov, I., Yang, Z., Veinot, J. G. C., & Linnros, J. (2015). Near-Unity Internal Quantum Efficiency of Luminescent Silicon Nanocrystals with Ligand Passivation. ACS Nano, 9(7), 7097–7104. https://doi.org/10.1021/acsnano.5b01717

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