Corrigendum to “Fabrication of polycrystalline silicon thin films by gold-induced crystallization of amorphous silicon suboxide” [Vacuum 192 (2021) 110462](S0042207X21004127)(10.1016/j.vacuum.2021.110462)

Abstract

The authors regret < that there is an inaccuracy when specifying the stoichiometry coefficient x of a-SiOx films. The value of 0.4 is indicated in the work which was obtained from the infrared (IR) transmission spectra. More precise measurements performed using X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS) showed that the stoichiometry coefficient x of the initial a-SiOx films is 0.9. In addition, this made it possible to refine the proportionality coefficient used to determine the concentration of bonded oxygen in a-SiOx by Fourier-transform IR spectroscopy. The corrections are as follows: In the text of the article, the chemical formula a-SiO0.4 should appear as a-SiO0.9 >. The authors would like to apologise for any inconvenience caused.