Annealing effects of In-doped ZnO films grown by spray pyrolysis method

Abstract

In-doped (2 mol%) ZnO films on glass substrate were grown by spray pyrolysis method at 500 °C. Samples were annealed under N 2 atmosphere between 100 and 600 °C for 5 min. The X-ray diffraction spectra indicated that the c -axis intensity ratio for a -axis was slightly increased with increasing annealing temperature. This meant that a degree of crystalinity increased with increasing annealing temperature. However, photoluminescence intensity decreased with annealing temperature, indicating that the increased the number of nonradiative recombination centers in the In-doped ZnO films.