Sputtered gold as an effective Schottky gate for strained Si/SiGe nanostructures

Abstract

Metallization of Schottky surface gates by sputtering Au on strained SiSiGe heterojunctions enables the depletion of the two dimensional electron gas at a relatively small voltage while maintaining an extremely low level of leakage current. A fabrication process has been developed to enable the formation of submicron Au electrodes sputtered onto SiSiGe without the need of a wetting layer. © 2007 American Institute of Physics.