(Invited) Fully Porous GaN p-n Junctions Fabricated by Chemical Vapor Deposition: A Green Technology towards More Efficient LEDs

Abstract

Porous GaN based LEDs produced by corrosion etching techniques have demonstrated enhanced light extraction efficiencies in the past. However, these fabrication techniques require further post-growth processing steps, which increase the price of the final device. In this paper, we review the process we developed for the formation of fully porous GaN p - n junctions directly during growth, using a sequential chemical vapor deposition (CVD) process to produce the different layers that form the p-n junction.