Formation of nanopores in a SiN/SiO 2 membrane with an electron beam

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Abstract

An electron beam can drill nanopores in Si O2 or silicon nitride membranes and shrink a pore to a smaller diameter. Such nanopores are promising for single molecule detection. The pore formation in a 40 nm thick silicon nitride Si O2 bilayer using an electron beam with a diameter of 8 nm (full width of half height) was investigated by electron energy loss spectroscopy with silicon nitride facing toward and away from the source. The O loss shows almost linear-independent of which layer faces the source, while N loss is quite complicated. After the formation of a pore, the membrane presents a wedge shape over a 70 nm radius around the nanopore. © 2005 American Institute of Physics.

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Wu, M. Y., Krapf, D., Zandbergen, M., Zandbergen, H., & Batson, P. E. (2005). Formation of nanopores in a SiN/SiO 2 membrane with an electron beam. Applied Physics Letters, 87(11). https://doi.org/10.1063/1.2043247

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