Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

Abstract

We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20 nm and the uniform interval of about 80 nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6 μ m-1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2 ppm. © 2008 American Institute of Physics.