Nonvolatile multilevel memory effect by resistive switching in manganite thin films

Abstract

A planar multilevel memory structure is proposed and examined based on the resistive switching phenomenon in La0.7Sr0.3Mn O3 films with gold electrodes. Through the application of specific voltage pulses, such structures can be driven to well-defined intermediate resistance values. Samples were subjected to repeated switching cycles and prolonged reading processes to examine their durability during operations. Prescribed states of the samples could be retained after 10 000 switching cycles, and such states remained stable upon continuous probing. The proposed structure provides a simple scheme for the implementation of compact and nonvolatile multibit memory devices. © 2008 American Institute of Physics.