Abstract
Lead-free (K0.48Na0.48Li0.04)(Nb 0.775Ta0.225)O3 (KNLNT) thin films were deposited on Pt(111)/Ti/SiO2/Si(001) substrates using pulsed laser deposition. The film exhibited a well-defined ferroelectric hysteresis loop with a remnant polarization 2Pr of 22.6 μC/cm2 and a coercive field Ec of 10.3 kV/mm. The effective piezoelectric coefficient d33, f of the KNLNT thin films was found to be about 49 pm/V by piezoelectric force microscope. The dominant conduction mechanisms of Au/KNLNT/Pt thin film capacitor were determined to be bulk-limited space-charge-limited-current and Poole-Frenkle emission at low and high electric field strengths, respectively, within a measured temperature range of 130-370 K. © 2011 American Institute of Physics.
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CITATION STYLE
Wang, D. Y., Lin, D. M., Kwok, K. W., Chan, N. Y., Dai, J. Y., Li, S., & Chan, H. L. W. (2011). Ferroelectric, piezoelectric, and leakage current properties of (K 0.48Na0.48Li0.04)(Nb0.775Ta 0.225)O3 thin films grown by pulsed laser deposition. Applied Physics Letters, 98(2). https://doi.org/10.1063/1.3535608
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