Resistive Switching phenomenon in FD-SOI Ω-Gate FETs: Transistor performance recovery and back gate bias influence

Abstract

Resistive Switching (RS) phenomenon, usually observed in two-terminal memristor devices, refers to the reversible change in resistance of a material under an external electric field. In this work, RS has been observed in N-type Fully Depleted Silicon-On-Insulator (FDSOI) Ω-gate nanowire field-effect transistors (NW-FETs). For the first time, partial recovery of the transistor's ID-VD characteristics during the RS cycling is experimentally demonstrated, indicating the potential of the device to be used both as a transistor and a memristor. The effect of increasing the back gate voltage on the RS characteristics was also experimentally investigated. It was found that higher back gate voltages enhance the RS parameters, thereby establishing a direct relationship between back bias and device performance.