Organic field-effect transistors with ultrathin gate insulator

Abstract

We have used a commercially available Mylar film coated with a thin (≈60nm) layer of aluminium and an ultrathin (≈3.5nm) SiO2 layer as flexible substrate for the manufacture of bottom-gate organic field-effect transistors (OFETs). We show that the SiO2 layer has insulating properties with a breakdown voltage of 1.6V and a capacitance of ≈1μF/cm2. We have manufactured organic field-effect transistors using this substrate, regioregular poly(3-hexylthiophene) (rrP3HT) as a p-type semiconductor, and gold source and drain contacts. This results in OFETs that operate with voltages on the order 1V. © 2004 Elsevier B.V. All rights reserved.