ECR (electron cyclotron resonance) plasma for thin film technology

Abstract

ECR plasma has been used widely and industrially for CVD and etching in semiconductor processes. In this paper, the progress which has been made in ECR plasma equipments and processing has been reviewed. ECR plasma source has some excellent features such as low pressure plasma generation, the capability of ion energy control and high ionization effi-ciency. The magnetic plasma control and the high power microwave plasma generation techniques developed in our laboratories have improved uniformity and throughput in comparison with those in RF plasma. Satisfactory performances are obtained in various processes, which are interlayer plan-arization, a-Si CVD tungsten CVD, Si02 and aluminum etchings. © 1990 IUPAC