High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

Abstract

Polyvinyl alcohol (PVA) and anodized Al2O3 layers were used as bi-layer gate for the fabrication of cobalt phthalocyanine (CoPc) wire base field-effect transistors (OFETs). CoPc wires were grown on SiO 2 surfaces by organic vapor phase deposition method. These devices exhibit a field-effect carrier mobility (μEF) value of 1.11 cm2/Vs. The high carrier mobility for CoPc molecules is attributed to the better capacitive coupling between the channel of CoPc wires and the gate through organic-inorganic dielectric layer. Our measurements also demonstrated the way to determine the thicknesses of the dielectric layers for a better process condition of OFETs. © 2013 © 2013 Author(s).