Abstract
A magnetic tunnel junction Fe 3 O 4 /MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function of the external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.
Cite
CITATION STYLE
Chigarev, S. G., Epshtein, E. M., Malikov, I. V., Mikhailov, G. M., & Zilberman, P. E. (2011). Tunnel Magnetoresistance of Fe 3 O 4 /MgO/Fe Nanostructures. ISRN Condensed Matter Physics, 2011, 1–3. https://doi.org/10.5402/2011/826941
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