Infrared Optoelectronic Sensing Technology

Abstract

Photodetectors and image sensors, especially in the infrared wavelength regime, are core components of various optical instruments for medical imaging, remote sensing, night vision, and surveillance, etc. The current commercial infrared photodetectors are mostly based on bulk materials including In1-x GaxAs, InSb, Hg1-x CdxTe, etc. Despite continued advancement and high photoelectrical performance, technological factors limit their widespread usage in next-generation photodetectors, especially, the need for cooling, and the high costs associated with the processing of III-V and II-VI semiconductors. Low-dimensional materials, including zero-dimensional (0D) quantum dots, 1D nanowires, and 2D layered materials, with strong light-matter coupling coefficient, quantum confinement, and ease of heterostructure construction, are emerged as alternative material platforms for high-performance photodetection technologies at room temperature. This article provides a comprehensive review of the technological evolution, contemporary challenges, and future development trends in infrared detector technologies. First, we systematically analyzed the representative materials and technological features of successive generations of infrared detectors. Then, the discussion focuses on advancements in fourth-generation detector technologies, particularly highlighting breakthroughs in multi-dimensional optical information fusion technology encompassing intensity, polarization, spectral, and phase detection. Finally, drawing on application requirements for neuromorphic vision infrared photodetectors that integrate infrared information acquisition, processing, and intelligent decision-making, the review explores transformative development pathways for next-generation infrared detector technologies.