Voltage-induced coercivity change in Co film grown on Cr2O3 barrier

Abstract

We investigated the electric field effect on the magnetic properties of the Pt or Ru/Cr2O3/Co/Pt structures fabricated by molecular beam epitaxy (MBE). The Cr2O3 layer fabricated using radical assisted MBE exhibits a high breakdown voltage (∼1.5 MV cm-1) comparable to the thicker films. Owing to interfacial perpendicular magnetic anisotropy, the Co layer exhibits a sufficiently large magnetic anisotropy energy (K eff > 1 ×106 J m-3). Further, a voltage-induced coercivity change is observed for the structure, with an efficiency of -0.5 mT V-1. The Cr2O3/Co multilayer is a promising structure for further investigation of the electric field effect of Co-based materials.