MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon

Abstract

The authors report on the growth of InAs/GaAs quantum dots lasers on silicon emitting in the 1.3 μm wavelength regime with p-doped active regions. A growth optimization procedure guided by a combination of high and low excitation photoluminescence is presented for the InAs quantum dot growth. Growth conditions derived from this procedure are used to produce high optical quality quantum dots embedded in a GaAs/AlxGa1−xAs graded index separate confinement heterostructure waveguide. Ridge waveguide lasers fabricated from the as-grown material achieve room temperature continuous wave lasing at low thresholds, with high output power and elevated T0.